RSD200N10TL
MOSFET N-CH 100V 20A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor presents the RSD200N10TL, an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. With a maximum on-resistance (Rds On) of 52mOhm at 10A and 10V, it offers efficient power handling. The RSD200N10TL is packaged in a TO-252-3, DPAK (SC-63) surface mount configuration and supplied on tape and reel. Key parameters include a gate charge (Qg) of 48.5 nC at 10V and input capacitance (Ciss) of 2200 pF at 25V. It operates at a junction temperature up to 150°C with a maximum power dissipation of 20W (Tc). This component is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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