RSD200N05TL
MOSFET N-CH 45V 20A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RSD200N05TL, is a surface mount device in a CPT3 package (TO-252-3, DPAK). This component features a Drain-to-Source Voltage (Vdss) of 45V and a continuous Drain Current (Id) of 20A at 25°C (Ta). The device exhibits a maximum On-Resistance (Rds On) of 28mOhm at 20A and 10V Vgs. With a maximum power dissipation of 20W (Tc), it is suitable for demanding applications. Key parameters include a gate charge of 12 nC (max) at 5V Vgs and input capacitance (Ciss) of 950 pF (max) at 10V Vds. The operating temperature range extends to 150°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 10 V |
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