RSD175N10TL
MOSFET N-CH 100V 17.5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSD175N10TL is an N-Channel MOSFET designed for demanding applications. This surface mount component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current capability of 17.5A at 25°C (Ta), with a maximum power dissipation of 20W (Tc). The RSD175N10TL offers a low on-resistance of 105mOhm at 8.8A and 10V (Vgs). Key electrical parameters include a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 950 pF at 25V. The operating junction temperature reaches up to 150°C. This device is supplied in a TO-252-3, DPAK package within a Tape & Reel (TR) configuration. Applications for this technology include power management and general-purpose switching in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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