RSD160P05TL
MOSFET P-CH 45V 16A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RSD160P05TL is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 45V and a continuous drain current (Id) of 16A at 25°C. The On-Resistance (Rds On) is specified at a maximum of 50mOhm at 16A and 10V gate drive. With a maximum power dissipation of 20W (Tc), it is suitable for power management tasks. Key parameters include a gate charge (Qg) of 16 nC at 5V and input capacitance (Ciss) of 2000 pF at 10V. The device operates at temperatures up to 150°C (TJ) and is housed in a TO-252-3, DPAK package, supplied on tape and reel. This component is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 10 V |
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