RSD150N06TL
MOSFET N-CH 60V 15A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RSD150N06TL, is a 60V device designed for efficient power switching. This surface mount component, supplied in a CPT3 package (TO-252-3, DPAK), offers a continuous drain current of 15A at 25°C and a maximum power dissipation of 20W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 40mOhm at 15A and 10V, with a gate threshold voltage (Vgs(th)) of 3V (1mA). The input capacitance (Ciss) is rated at 930pF (10V), and the gate charge (Qg) is 18nC (10V). This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 10 V |
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