RSD140P06TL
MOSFET P-CH 60V 14A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSD140P06TL is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 14A at 25°C. The on-resistance (Rds On) is specified at a maximum of 84mOhm at 14A and 10V gate-source voltage. With a maximum power dissipation of 20W (Tc), it is suitable for demanding thermal environments. The gate charge (Qg) is 27 nC at 10V, and input capacitance (Ciss) is 1900 pF at 10V. This surface mount component is provided in a TO-252-3, DPAK package. The RSD140P06TL is commonly utilized in automotive, industrial power control, and battery management systems. Drive voltages range from 4V to 10V, with a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
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