RSD131P10TL
MOSFET P-CH 100V 13A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RSD131P10TL is a P-Channel MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 13A at 25°C (Tc). The RSD131P10TL features a low on-resistance (Rds On) of 200mOhm maximum at 6.5A and 10V Vgs. With a gate charge (Qg) of 40nC maximum at 10V and input capacitance (Ciss) of 2400pF maximum at 25V, it is suitable for power switching and control circuits. The device operates at an ambient temperature up to 150°C (TJ) with power dissipation of 850mW (Ta) and 20W (Tc). This MOSFET is available in a CPT3 package, specifically the TO-252-3, DPAK (2 Leads + Tab), SC-63, supplied on tape and reel. Its specifications make it ideal for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
