RSD080P05TL
MOSFET P-CH 45V 8A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSD080P05TL is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 45 V and a continuous drain current (Id) of 8A at 25°C. The device offers a low on-resistance (Rds On) of 91mOhm maximum at 8A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 93.4 nC maximum at 5V and an input capacitance (Ciss) of 11000 pF maximum at 10V drain-to-source voltage. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package and can dissipate up to 15W at 25°C case temperature. The operating junction temperature range extends to 150°C. This MOSFET is suitable for various applications including power management and load switching in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 93.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 10 V |
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