RSD080N06TL
MOSFET N-CH 60V 8A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel Power MOSFET, part number RSD080N06TL, offers a 60V drain-source breakdown voltage and an 8A continuous drain current at 25°C (Ta). Featuring an 80mOhm maximum Rds(on) at 8A and 10V Vgs, this device utilizes advanced MOSFET technology for efficient power switching. The CPT3 package (TO-252-3, DPAK) facilitates surface mounting, with a maximum power dissipation of 15W (Tc). Key parameters include a 9.4 nC gate charge (Qg) at 10V and 380 pF input capacitance (Ciss) at 10V. Gate drive voltage ranges from 4V to 10V. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 10 V |
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