RSD050N10TL
MOSFET N-CH 100V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RSD050N10TL is an N-Channel MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 5A at 25°C, this component offers robust performance. The Rds On is rated at a maximum of 190mOhm at 5A and 10V Vgs, with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET utilizes Metal Oxide technology and has a typical gate charge (Qg) of 14 nC at 10V. The input capacitance (Ciss) is a maximum of 530 pF at 25V. With a maximum power dissipation of 15W at 25°C, it is suitable for applications requiring efficient power handling. The device operates at temperatures up to 150°C (TJ) and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, presented in Tape & Reel (TR) format. Its specifications make it a viable option for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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