RSD050N06TL
MOSFET N-CH 60V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RSD050N06TL, offers 60V drain-source breakdown voltage and a continuous drain current of 5A at 25°C (Ta). This surface mount device features a maximum on-resistance of 109mOhm at 5A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 3V at 1mA. The device supports drive voltages between 4V and 10V. Key parameters include a gate charge (Qg) of 8nC (max) at 10V and input capacitance (Ciss) of 290pF (max) at 10V Vds. With a maximum power dissipation of 15W (Tc) and an operating junction temperature of 150°C, the RSD050N06TL is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. This MOSFET technology is suitable for applications in power management and general switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 109mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |
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