RSD046P05TL
MOSFET P-CH 45V 4.5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RSD046P05TL is a P-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 45V and a continuous Drain current (Id) of 4.5A at 25°C (Tc). The Rds On is specified at a maximum of 155mOhm at 4.5A and 10V gate drive. With a maximum junction temperature of 150°C, it offers power dissipation capabilities of 850mW (Ta) and 15W (Tc). The CPT3 package (TO-252-3, DPAK) is suitable for surface mount assembly and is supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 12nC at 5V and Input Capacitance (Ciss) of 550pF at 10V. This MOSFET finds application in various industrial sectors including automotive and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
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