RS3L140GNGZETB
NCH 60V 14A POWER MOSFET: RS3L14Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel Power MOSFET, part number RS3L140GNGZETB, offers a 60V drain-source voltage and a continuous drain current capability of 14A at 25°C ambient. This surface mount device, packaged in an 8-SOP (8-SOIC), features a low on-resistance of 6.5mOhm maximum at 14A and 10V Vgs. Key parameters include a gate charge of 58 nC maximum at 10V Vgs and an input capacitance of 2980 pF maximum at 30V Vds. The device is rated for operation up to a junction temperature of 150°C and has a maximum power dissipation of 1.4W. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 2.7V @ 500µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 30 V |
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