RS3L045GNGZETB
MOSFET N-CH 60V 4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS3L045GNGZETB is an N-Channel MOSFET designed for power switching applications. This component features a 60V drain-to-source voltage (Vds) and a continuous drain current (Id) of 4.5A at 25°C. The Rds(on) is specified at a maximum of 59mOhm when driven at 10V with a drain current of 4.5A. With a maximum power dissipation of 2W (Ta), this MOSFET is suitable for surface mount integration within an 8-SOP package. Key parameters include a gate charge (Qg) of 5.6 nC (max) at 10V and input capacitance (Ciss) of 285 pF (max) at 30V. It supports gate-source voltage (Vgs) up to ±20V and has a threshold voltage (Vgs(th)) of 2.7V (max) at 50µA. The operating junction temperature is rated up to 150°C. This device is commonly utilized in industrial automation and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.7V @ 50µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 285 pF @ 30 V |
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