RS1P600BHTB1
NCH 100V 60A, HSOP8, POWER MOSFEManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RS1P600BHTB1 is an N-Channel MOSFET designed for high-power applications. This device features a drain-source voltage (Vdss) of 100 V and offers a continuous drain current (Id) of 18A at ambient temperature and 60A at case temperature. With a maximum on-resistance (Rds On) of 8.8mOhm at 18A and 10V, it ensures efficient power delivery. The RS1P600BHTB1 has a maximum junction temperature of 150°C and a power dissipation of 3W at ambient and 35W at case temperature. It is supplied in an 8-HSOP package and utilizes MOSFET technology. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 4080 pF at 50V. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4080 pF @ 50 V |
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