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RS1P600BETB1

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RS1P600BETB1

MOSFET N-CH 100V 17.5A/60A 8HSOP

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor RS1P600BETB1 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V, with a continuous drain current (Id) rating of 17.5A at ambient temperature and 60A at case temperature. The low on-resistance (Rds On) is specified at 9.7mOhm maximum at 17.5A and 10V gate-source voltage. Its robust thermal performance includes a maximum power dissipation of 3W (Ta) and 35W (Tc). Key parameters include a gate charge (Qg) of 33 nC maximum at 10V, and input capacitance (Ciss) of 2200 pF maximum at 50V. The device is housed in an 8-HSOP (8-PowerTDFN) package, suitable for surface mounting and supplied on tape and reel. The operating junction temperature reaches 150°C. This MOSFET is utilized in various power management solutions and high-efficiency switching circuits across industries such as industrial automation, consumer electronics, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs9.7mOhm @ 17.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id4V @ 500µA
Supplier Device Package8-HSOP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 50 V

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