RS1L180GNTB
MOSFET N-CH 60V 18A/68A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RS1L180GNTB is an N-channel power MOSFET designed for demanding applications. This component features a 60V drain-to-source breakdown voltage and offers a continuous drain current of 18A at 25°C ambient and 68A at 25°C case temperature. Its low on-resistance of 5.6mOhm is achieved at 18A and 10V gate-source voltage. The device has a maximum junction temperature of 150°C and a power dissipation of 3W (Ta). With a gate charge of 63 nC at 10V and input capacitance of 3230 pF at 30V, it is suitable for high-speed switching applications. The RS1L180GNTB is supplied in an 8-HSOP package and is available on tape and reel. This MOSFET is commonly utilized in power supply units, motor control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 30 V |
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