RS1L145GNTB
MOSFET N-CH 60V 14.5A/47A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1L145GNTB is an N-Channel Power MOSFET designed for efficient power management. This device features a drain-source voltage (Vdss) of 60V and offers a continuous drain current (Id) of 14.5A at ambient temperature and 47A at case temperature. The low on-resistance (Rds On) of 9.7mOhm at 14.5A and 10V gate drive, coupled with a maximum power dissipation of 3W (Ta), makes it suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 37 nC and input capacitance (Ciss) of 1880 pF. Mounting is facilitated via the 8-HSOP package, provided in tape and reel for automated assembly. This component is utilized in power supply units, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta), 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2.7V @ 200µA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 30 V |
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