RS1L120GNTB
MOSFET N-CH 60V 12A/36A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1L120GNTB is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 60 V. This device offers a continuous drain current (Id) of 12A at typical ambient temperature (Ta) and 36A at case temperature (Tc). Maximum power dissipation is 3W at ambient temperature. Key electrical characteristics include a maximum Rds(on) of 12.7 mOhm at 12A and 10V Vgs, and a gate charge (Qg) of 26 nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 1330 pF at 30V Vds. The device operates at a maximum junction temperature of 150°C and supports gate-source voltages up to ±20V, with a threshold voltage (Vgs(th)) of 2.7V at 200µA. It is supplied in an 8-HSOP package, suitable for surface mounting, and is available on tape and reel. This component is utilized in applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.7mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2.7V @ 200µA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 30 V |
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