RS1G300GNTB
MOSFET N-CH 40V 30A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1G300GNTB is an N-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 30A at 25°C. The low on-resistance of 2.5mOhm at 30A and 10V gate drive voltage ensures efficient power transfer. With a maximum junction temperature of 150°C and a power dissipation of 3W (ambient) or 35W (case), it is suitable for power management solutions. The RS1G300GNTB is housed in an 8-HSOP package and supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 56.8 nC at 10V and an input capacitance (Ciss) of 4230 pF at 20V. This component finds utility in automotive, industrial, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 56.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4230 pF @ 20 V |
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