RS1G260MNTB
MOSFET N-CH 40V 26A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1G260MNTB is a N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 26A at 25°C ambient and 80A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 3.3mOhm at 26A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 3W (Ta) and 35W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 44 nC at 10V Vgs and an input capacitance (Ciss) of 2988 pF at 20V Vds. The RS1G260MNTB is housed in an 8-HSOP package and is supplied on tape and reel. Applications span automotive, industrial, and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2988 pF @ 20 V |
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