RS1G180MNTB
MOSFET N-CH 40V 18A/80A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1G180MNTB is an N-Channel MOSFET featuring a 40V drain-source breakdown voltage. This device offers a continuous drain current of 18A at ambient temperature and 80A at case temperature, with a maximum power dissipation of 3W (ambient) and 30W (case). The low on-resistance is specified as 7mOhm at 18A and 10V Vgs. Key parameters include a gate charge of 19.5nC (max) at 10V Vgs and an input capacitance of 1293pF (max) at 20V Vds. The MOSFET operates within a temperature range of 150°C (TJ) and is housed in an 8-HSOP package, supplied in tape and reel. This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1293 pF @ 20 V |
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