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RS1G150MNTB

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RS1G150MNTB

MOSFET N-CH 40V 15A 8HSOP

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor RS1G150MNTB is an N-Channel MOSFET designed for efficient power switching applications. This component features a 40V drain-source voltage (Vdss) and supports a continuous drain current of 15A at 25°C ambient temperature, increasing to 43A under continuous drain current at case temperature. The RS1G150MNTB offers a low on-resistance (Rds On) of 10.6mOhm at 15A and 10V gate-source voltage. With a maximum power dissipation of 3W (Ta) and 25W (Tc), it is suitable for demanding thermal environments. The device operates at a junction temperature up to 150°C and is housed in an 8-HSOP package, ideal for surface mounting. Key electrical characteristics include a gate charge (Qg) of 15 nC (Max) at 10V and input capacitance (Ciss) of 930 pF (Max) at 20V. This MOSFET is commonly utilized in automotive, industrial power, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs10.6mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-HSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds930 pF @ 20 V

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