RS1G150MNTB
MOSFET N-CH 40V 15A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1G150MNTB is an N-Channel MOSFET designed for efficient power switching applications. This component features a 40V drain-source voltage (Vdss) and supports a continuous drain current of 15A at 25°C ambient temperature, increasing to 43A under continuous drain current at case temperature. The RS1G150MNTB offers a low on-resistance (Rds On) of 10.6mOhm at 15A and 10V gate-source voltage. With a maximum power dissipation of 3W (Ta) and 25W (Tc), it is suitable for demanding thermal environments. The device operates at a junction temperature up to 150°C and is housed in an 8-HSOP package, ideal for surface mounting. Key electrical characteristics include a gate charge (Qg) of 15 nC (Max) at 10V and input capacitance (Ciss) of 930 pF (Max) at 20V. This MOSFET is commonly utilized in automotive, industrial power, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 20 V |
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