RS1E320GNTB
MOSFET N-CH 30V 32A 8HSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RS1E320GNTB is an N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and offers continuous drain current capabilities of 38A at 25°C ambient and 80A under typical thermal conditions. The low on-resistance, specified at 1.9mOhm maximum at 32A and 10V Vgs, minimizes conduction losses. With a gate charge of 42.8nC maximum at 10V Vgs and input capacitance of 2850pF maximum at 15V Vds, it supports effective switching performance. The device is packaged in an 8-HSOP for surface mounting and can dissipate up to 3W ambient or 34W under specific thermal management. This component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 34W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 15 V |
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