RRR040P03TL
MOSFET P-CH 30V 4A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RRR040P03TL is a P-Channel MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4A at 25°C (Ta). With a maximum on-resistance (Rds On) of 45mOhm at 4A and 10V, it offers efficient switching. The RRR040P03TL is packaged in a TSMT3 (SC-96) surface mount package, dissipating up to 1W (Ta). Key parameters include a gate charge (Qg) of 10.5 nC at 5V and input capacitance (Ciss) of 1000 pF at 10V. This component is suitable for use in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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