RRR030P03TL
MOSFET P-CH 30V 3A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RRR030P03TL is a P-Channel MOSFET designed for surface mount applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The Rds On is specified at a maximum of 75mOhm with 3A drain current and 10V gate-to-source voltage. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 1mA. Key electrical parameters include a maximum gate charge (Qg) of 5.2 nC at 5V and a maximum input capacitance (Ciss) of 480 pF at 10V. With a maximum power dissipation of 1W (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for power management and switching applications across various industries. It is supplied in a TSMT3 package, part of the SC-96 family, and is available in Digi-Reel® packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V |
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