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RRR015P03TL

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RRR015P03TL

MOSFET P-CH 30V 1.5A TSMT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor RRR015P03TL is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) capability of 1.5 A at 25°C. With a maximum power dissipation of 540mW (Ta), it offers an Rds On of 160mOhm at 1.5 A and 10 V. The gate threshold voltage (Vgs(th)) is rated at 2.5V at 1mA, and it supports gate-source voltages up to ±20V. Key electrical characteristics include a maximum gate charge (Qg) of 6.5 nC at 10 V and a maximum input capacitance (Ciss) of 230 pF at 10 V. This device is supplied in a TSMT3 package, also known as SC-96, and is available on tape and reel. Its operational temperature range extends to 150°C (TJ). This MOSFET is utilized in various industrial applications, including power management and switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-96
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)540mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageTSMT3
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V

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