RRQ045P03TR
MOSFET P-CH 30V 4.5A TSMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RRQ045P03TR is a P-Channel MOSFET designed for power management applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 4.5A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 35mOhm when conducting 4.5A with a 10V gate-source voltage. With a gate charge (Qg) of 14 nC at 5V and input capacitance (Ciss) of 1350 pF at 10V, this MOSFET offers efficient switching characteristics. The maximum power dissipation is 600mW (Ta). The RRQ045P03TR is housed in a TSMT6 (SC-95) package, a compact surface-mount solution suitable for space-constrained designs. It operates across a temperature range of -55°C to 150°C and supports gate drive voltages up to ±20V. Applications include power switching, battery management, and load switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT6 (SC-95) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 10 V |
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