RRL025P03TR
MOSFET P-CH 30V 2.5A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, RRL025P03TR, is a 30 V device in a TUMT6 surface mount package. This component offers a continuous drain current of 2.5 A (Ta) and a maximum power dissipation of 320 mW (Ta). Key electrical parameters include a maximum Rds On of 75 mOhm at 2.5 A and 10 V, a gate charge of 5.2 nC @ 5 V, and input capacitance of 480 pF @ 10 V. The device features a threshold voltage (Vgs(th)) of 2.5 V @ 1 mA and supports gate-source voltages up to ±20 V. Operating temperature reaches 150°C (TJ). This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TUMT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V |
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