RRH140P03GZETB
MOSFET P-CH 30V 14A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RRH140P03GZETB is a P-Channel MOSFET designed for high-performance applications. This device features a 30V drain-source breakdown voltage and supports a continuous drain current of 14A at 25°C (Ta). The low on-resistance is specified as a maximum of 7mOhm at 14A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 8000 pF at 10V. The MOSFET operates within a temperature range of 150°C (TJ) and has a maximum power dissipation of 650mW (Ta). It is provided in an 8-SOP package suitable for surface mounting, supplied on tape and reel. This component finds application in power management circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 10 V |
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