RRH090P03GZETB
MOSFET P-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RRH090P03GZETB is a P-Channel MOSFET designed for demanding power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 9A at 25°C. With a maximum on-resistance (Rds On) of 15.4mOhm at 9A and 10V, it offers low conduction losses. The device is housed in an 8-SOP package, suitable for surface mounting, and dissipates a maximum of 650mW at 25°C. Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 3000 pF at 10V. It operates within a temperature range of 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 15.4mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
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