RRH075P03TB1
MOSFET P-CH 30V 7.5A 8SOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RRH075P03TB1 is a P-Channel MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 7.5A at 25°C. With a low on-resistance (Rds On) of 21mOhm at 7.5A and 10V Vgs, it ensures efficient power transfer. The device is housed in an 8-SOP package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 21 nC at 5V and an input capacitance (Ciss) of 1900 pF at 10V. The maximum power dissipation is 650mW. This MOSFET is utilized in power management, automotive, and industrial automation sectors. Operating temperature ranges up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |
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