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RQ5L035GNTCL

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RQ5L035GNTCL

MOSFET N-CH 60V 3.5A TSMT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor RQ5L035GNTCL is an N-Channel MOSFET designed for surface mount applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and offers a continuous drain current (Id) of 3.5A at 25°C. With a maximum Rds On of 50mOhm at 3.5A and 10V Vgs, it provides efficient switching. The RQ5L035GNTCL operates with a gate drive voltage range of 4.5V to 10V and has a maximum gate charge (Qg) of 7.3 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 375 pF at 30V. The component is housed in a TSMT3 (SC-96) package, supplied on tape and reel, and can operate within an ambient temperature range up to 150°C (TJ). Power dissipation is rated at 700mW (Ta). This MOSFET is suitable for applications in automotive and industrial sectors requiring robust power switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-96
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id2.7V @ 50µA
Supplier Device PackageTSMT3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds375 pF @ 30 V

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