RQ3P300BETB1
MOSFET N-CH 100V 10A/36A 8HSMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RQ3P300BETB1 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 100V and offers a continuous drain current (Id) of 10A at ambient temperature (Ta) and 36A at case temperature (Tc). The RQ3P300BETB1 exhibits a maximum on-resistance (Rds On) of 21mOhm at 10A and 10V gate-source voltage. With a maximum junction temperature of 150°C, it can dissipate up to 2W (Ta) or 32W (Tc). Key electrical parameters include a gate charge (Qg) of 19.1 nC (max) at 10V and input capacitance (Ciss) of 1250 pF (max) at 50V. The RQ3P300BETB1 is housed in an 8-HSMT (3.2x3) surface mount package and is supplied on tape and reel. This component is utilized in industries such as automotive, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 32W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
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