RQ3L090GNTB
MOSFET N-CH 60V 9A/30A 8HSMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RQ3L090GNTB is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 60V Drain-Source Voltage (Vds) and supports a continuous drain current of 9A at 25°C ambient temperature, scaling to 30A under continuous case conditions. With a low on-resistance of 13.9mOhms at 9A and 10V Vgs, it minimizes conduction losses. The RQ3L090GNTB is specified for operation up to a junction temperature of 150°C and offers a maximum power dissipation of 2W in a typical ambient environment. Key electrical characteristics include a maximum gate charge of 24.5 nC at 10V and an input capacitance (Ciss) of 1260 pF at 30V. This MOSFET is supplied in an 8-HSMT (3.2x3) package, suitable for surface mounting. Its robust design makes it well-suited for use in automotive, industrial power management, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.7V @ 300µA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 30 V |
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