RQ3L070BGTB1
NCH 60V 20A, HSMT8G, POWER MOSFEManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 60 V 7A (Ta), 20A (Tc) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.7mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 30 V |