RQ3G150GNTB
MOSFET N-CHANNEL 40V 39A 8HSMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RQ3G150GNTB is a 40V N-Channel MOSFET designed for efficient power switching applications. This device features a low Rds(on) of 7.2mOhm at 15A and 10V, supported by a continuous drain current rating of 39A (Tc) and a maximum power dissipation of 20W (Tc). The gate charge is specified at 11.6 nC (max) at 4.5V, with an input capacitance of 1450 pF (max) at 20V. The RQ3G150GNTB is housed in an 8-HSMT (3.2x3) package, suitable for surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in automotive, industrial power supplies, and consumer electronics where high efficiency and robust performance are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 20 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
