RQ3E180GNTB
MOSFET N-CH 30V 18A 8HSMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 30 V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 15 V |
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