RQ3E150MNTB1
MOSFET N-CH 30V 15A 8HSMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor RQ3E150MNTB1 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 15A at 25°C, with a maximum power dissipation of 2W. The RQ3E150MNTB1 offers a low on-resistance (Rds On) of 6.7mOhm at 15A and 10V, facilitated by its advanced MOSFET technology. Key electrical parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1100 pF at 15V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in an 8-HSMT (3.2x3) package, utilizing a surface mount configuration. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
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