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RQ3E130MNTB1

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RQ3E130MNTB1

MOSFET N-CH 30V 13A HSMT8

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor RQ3E130MNTB1 is a 30V N-Channel MOSFET designed for demanding applications. This device features a low on-resistance of 8.1mOhm at 13A and 10V Vgs, contributing to high efficiency. With a continuous drain current capability of 13A (Ta) and a maximum power dissipation of 2W (Ta), it is suitable for power management in automotive and industrial control systems. The RQ3E130MNTB1 utilizes an 8-HSMT (3.2x3) package, also known as 8-PowerVDFN, for surface mounting. Key electrical characteristics include a gate charge of 14 nC (max) at 10V Vgs and input capacitance of 840 pF (max) at 15V Vds. The operating temperature range extends to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs8.1mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 15 V

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