RQ3E130MNTB1
MOSFET N-CH 30V 13A HSMT8Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RQ3E130MNTB1 is a 30V N-Channel MOSFET designed for demanding applications. This device features a low on-resistance of 8.1mOhm at 13A and 10V Vgs, contributing to high efficiency. With a continuous drain current capability of 13A (Ta) and a maximum power dissipation of 2W (Ta), it is suitable for power management in automotive and industrial control systems. The RQ3E130MNTB1 utilizes an 8-HSMT (3.2x3) package, also known as 8-PowerVDFN, for surface mounting. Key electrical characteristics include a gate charge of 14 nC (max) at 10V Vgs and input capacitance of 840 pF (max) at 15V Vds. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 15 V |
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