RQ3E100MNTB1
MOSFET N-CH 30V 10A HSMT8Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RQ3E100MNTB1 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 10A at 25°C. The low on-resistance is specified at 12.3mOhm at 10A and 10V gate-source voltage. It operates with drive voltages ranging from 4.5V to 10V and has a maximum gate-source voltage of ±20V. The device exhibits a typical input capacitance (Ciss) of 520pF at 15V and a gate charge (Qg) of 9.9nC at 10V. The RQ3E100MNTB1 is housed in an 8-HSMT (3.2x3) package, identified as 8-PowerVDFN, for surface mounting. With a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for use in automotive and industrial power management systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 15 V |
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