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RQ3E100MNTB1

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RQ3E100MNTB1

MOSFET N-CH 30V 10A HSMT8

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's RQ3E100MNTB1 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 10A at 25°C. The low on-resistance is specified at 12.3mOhm at 10A and 10V gate-source voltage. It operates with drive voltages ranging from 4.5V to 10V and has a maximum gate-source voltage of ±20V. The device exhibits a typical input capacitance (Ciss) of 520pF at 15V and a gate charge (Qg) of 9.9nC at 10V. The RQ3E100MNTB1 is housed in an 8-HSMT (3.2x3) package, identified as 8-PowerVDFN, for surface mounting. With a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for use in automotive and industrial power management systems. The device is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs12.3mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs9.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds520 pF @ 15 V

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