RQ1E050RPFRATR
PCH -30V -5A SMALL SIGNAL MOSFETManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RQ1E050RPFRATR is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 5A at 25°C (Ta). The low on-resistance, specified at 31mOhm maximum at 5A and 10V Vgs, ensures efficient power handling. With a maximum power dissipation of 1.1W (Ta) and an operating temperature range up to 150°C (TJ), this MOSFET is suitable for automotive applications, having achieved AEC-Q101 qualification. The TSMT8 package, an 8-SMD with flat leads, facilitates surface mounting. Key parameters include a Gate Charge (Qg) of 28 nC maximum at 10V Vgs and Input Capacitance (Ciss) of 1300 pF maximum at 10V Vds. Drive voltages range from 4V to 10V for optimal Rds(on) performance, with a maximum Gate-to-Source Voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 10 V |
| Qualification | AEC-Q101 |
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