RQ1A070ZPTR
MOSFET P-CH 12V 7A TSMT8Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor P-Channel MOSFET, part number RQ1A070ZPTR, offers 12V drain-to-source voltage and 7A continuous drain current. This surface mount device in a TSMT8 package features a maximum Rds(on) of 12mOhm at 7A and 4.5V Vgs. The gate charge is specified at 58nC maximum at 4.5V, and input capacitance (Ciss) is 7400pF maximum at 6V. Designed for efficient switching, it supports gate drive voltages from 1.5V to 4.5V with a maximum Vgs of ±10V. The device operates up to 150°C junction temperature and has a power dissipation of 700mW. This component is commonly utilized in automotive and industrial applications requiring robust power switching. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSMT8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 6 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
