RQ1A060ZPTR
MOSFET P-CH 12V 6A TSMT8Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RQ1A060ZPTR is a P-Channel MOSFET designed for power management applications. This component features a drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 6A at 25°C. With a maximum on-resistance (Rds On) of 23mOhm at 6A and 4.5V gate-source voltage, it offers efficient switching. The device operates with drive voltages ranging from 1.5V to 4.5V and has a gate charge (Qg) of 34 nC at 4.5V. Key parameters include input capacitance (Ciss) of 2800 pF at 6V and a power dissipation of 700mW. The RQ1A060ZPTR is housed in a TSMT8 package for surface mounting and is suitable for use in automotive and industrial electronics. It supports a maximum junction temperature of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSMT8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 6 V |
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