RP1L055SNTR
MOSFET N-CH 60V 5.5A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RP1L055SNTR is a surface mount N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) rating and a continuous drain current (Id) capability of 5.5A at 25°C (Ta). With a maximum on-resistance (Rds On) of 49mOhm at 5.5A and 10V Vgs, it offers efficient power switching. The RP1L055SNTR operates within a junction temperature range of 150°C (TJ) and has a maximum power dissipation of 2W (Ta). Key electrical parameters include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 730 pF at 10V Vds. The device is supplied in a 6-SMD, Flat Leads MPT6 package, delivered on tape and reel (TR). This MOSFET is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 10 V |
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