RP1H065SPTR
MOSFET P-CH 45V 6.5A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, RP1H065SPTR. This device features a 45V drain-source breakdown voltage and a continuous drain current capability of 6.5A at 25°C ambient. The MPT6 package offers a surface mount solution with 2W maximum power dissipation. Key electrical characteristics include a maximum Rds(on) of 31mOhm at 6.5A and 10V Vgs, with a typical gate charge (Qg) of 28nC at 5V. Input capacitance (Ciss) is rated at 3200pF maximum at 10V Vds. The operating junction temperature range is -55°C to 150°C. This component is suitable for power management applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 45 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 10 V |
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