RP1E100XNTR
MOSFET N-CH 30V 10A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RP1E100XNTR is an N-Channel MOSFET with a Drain-Source voltage of 30 V. This surface mount device, packaged in the MPT6 (6-SMD, Flat Leads) configuration and supplied on tape and reel, offers a continuous drain current capability of 10A at 25°C. The Rds On is specified at a maximum of 13mOhm at 10A and 10V Vgs, with drive voltages ranging from 4V to 10V. Key parameters include a gate charge of 11 nC at 5V Vgs and an input capacitance (Ciss) of 800 pF at 10V Vds. The device supports a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 1mA. With a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for applications in automotive, industrial, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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