RP1E090XNTCR
MOSFET N-CH 30V 9A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RP1E090XNTCR is an N-Channel MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C. With a low on-resistance (Rds On) of 17mOhm at 9A and 10V Vgs, it offers efficient power switching. The MPT6 package, a 6-SMD flat lead configuration, supports surface mounting and a maximum power dissipation of 2W (Ta). Key parameters include a gate charge (Qg) of 6.8 nC at 5V and input capacitance (Ciss) of 440 pF at 10V Vds. Operating temperature reaches up to 150°C (TJ). This component is commonly utilized in automotive, industrial, and power management systems where reliable and efficient switching is critical. The drive voltage range is specified from 4V to 10V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 10 V |
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