RP1E090RPTR
MOSFET P-CH 30V 9A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor RP1E090RPTR is a P-Channel MOSFET in a MPT6 package, featuring a 30V drain-source breakdown voltage. This surface mount component offers a continuous drain current of 9A at 25°C (Ta) with a maximum power dissipation of 2W (Ta). The Rds On is rated at a maximum of 16.9mOhm at 9A and 10V Vgs. Key parameters include a gate charge (Qg) of 30 nC at 5V Vgs and input capacitance (Ciss) of 3000 pF at 10V Vds. It supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 2.5V at 1mA. This device is suitable for applications in automotive and industrial sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
