RP1E070XNTCR
MOSFET N-CH 30V 7A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RP1E070XNTCR is a surface mount N-Channel MOSFET with a drain-source voltage of 30 V. This component features a continuous drain current capability of 7A at 25°C and a maximum power dissipation of 2W. The Rds On is specified at 28mOhm maximum at 7A and 10V Vgs. Key parameters include a gate charge of 5.8 nC at 5V Vgs and an input capacitance of 390 pF maximum at 10V Vds. The device operates up to 150°C junction temperature and is supplied in a 6-SMD, Flat Leads package, specifically the MPT6 supplier device package, on tape and reel. This technology is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 10 V |
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